Search results for "Driven element"
showing 2 items of 2 documents
Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.
2019
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
Application of Ge Nanowire for Two-Input Bistable Nanoelectromechanical Switch
2013
Recently, several research groups presented bistable two-terminal nanoelectromechanical switches based on individual single-clamped active element. All presented devices had one input electrode. Similar devices having two or more input electrodes have not been yet investigated. In this work we present the two-input bistable controlled nanoelectromechanical switch based on an individual single-clamped Ge nanowire. The switch is realised using in-situ SEM technique and operating due to balancing of electrostatic, adhesion and elastic forces. The operation conditions of the device are investigated and presented. The advantages and drawbacks of the device are discussed. DOI: http://dx.doi.org/1…